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REVISTA DE CHIMIE
Cite as: Rev. Chim.
https://doi.org/10.37358/Rev.Chim.1949

OSIM Nr. R102355
ISSN Online 2668-8212
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Revista de Chimie (Rev. Chim.), Year 2014, Volume 65, Issue 5,





Elena Emanuela Valcu (Herbei), Viorica Musat, Michael Jank, Susanne Oertel
Sol-gel Preparation of ZrO2-PMMA for Thin Films Transistors

Abstract:

The hybrid metal oxide/polymer thin films are a very promising class of dielectric materials used as a gate for the last generation of field-effect transistors (TTFT). The zirconia nanoparticles are suitable for the formation of discrete inorganic building blocks covalently bonded to the organic polymers in hybrid materials. In this paper, zirconia nanoparticles (ZrO2 NPs) and polymthylmetacrylate (PMMA) were used to obtain hybrid thin films. The zirconia nanoparticles were functionalized with MPS agents by using a modified sol-gel route. Poly methyl methacrylate was used as an organic component to obtain flexible and resistant hybrid thin films with thickness in nanometer range by using spin coating techniques. This work presents a second work for the optimization of the homogeneity of thin film layer to obtain layer with better dielectric properties. Thin films with good adherence to silicon substrates and dielectric permitivity between 4.5 and 6 have been obtained. The morphology of thin films were investigated by scanning electron microscopy and the dielectric behavior was evaluated based on I-V and C-V measurements. Keywords: zirconia nanoparticles, PMMA, modified sol-gel, hybrid thin films, dielectric constant

Issue: 2014, Volume 65, Issue 5
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