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REVISTA DE CHIMIE
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https://doi.org/10.37358/Rev.Chim.1949

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Revista de Chimie (Rev. Chim.), Year 2017, Volume 68, Issue 2, 232-237

https://doi.org/10.37358/RC.17.2.5426

Malha Nazef Allaoua, Moussa Bounoughaz, Rachid Lamari

Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride

Abstract:

The study focused on the effect of cooling rate on the behaviour of oxide layers formed on silicon (Si) electrodes in 3% Sodium Chloride. All analysis conducted by electrochemical and spectral techniques confirmed that the stability of the silicon oxide film is influenced by the cooling kinetic used in the manufacturing process of Si material. The electronic structure model studied by Mott-Schottky measurements describes the passive film as a hetero-junction (p-n) composed of a metal/Si oxides interface and Si hydroxides/electrolyte interface.
Keywords:
Silicon; cyclic voltammetry; semiconductor; Mott-Shottky

Issue: 2017, Volume 68, Issue 2
Pages: 232-237
Publication date: 2017/3/15
https://doi.org/10.37358/RC.17.2.5426
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This article is published under the Creative Commons Attribution 4.0 International License
Citation Styles
Cite this article as:
ALLAOUA, M.N., BOUNOUGHAZ, M., LAMARI, R., Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride, Rev. Chim., 68(2), 2017, 232-237.

Vancouver
Allaoua MN, Bounoughaz M, Lamari R. Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride. Rev. Chim.[internet]. 2017 Feb;68(2):232-237. Available from: https://doi.org/10.37358/RC.17.2.5426


APA 6th edition
Allaoua, M.N., Bounoughaz, M. & Lamari, R. (2017). Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride. Revista de Chimie, 68(2), 232-237. https://doi.org/10.37358/RC.17.2.5426


Harvard
Allaoua, M.N., Bounoughaz, M., Lamari, R. (2017). 'Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride', Revista de Chimie, 68(2), pp. 232-237. https://doi.org/10.37358/RC.17.2.5426


IEEE
M.N. Allaoua, M. Bounoughaz, R. Lamari, "Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride". Revista de Chimie, vol. 68, no. 2, pp. 232-237, 2017. [online]. https://doi.org/10.37358/RC.17.2.5426


Text
Malha Nazef Allaoua, Moussa Bounoughaz, Rachid Lamari,
Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride,
Revista de Chimie,
Volume 68, Issue 2,
2017,
Pages 232-237,
ISSN 2668-8212,
https://doi.org/10.37358/RC.17.2.5426.
(https://revistadechimie.ro/Articles.asp?ID=5426)
Keywords: Silicon; cyclic voltammetry; semiconductor; Mott-Shottky


RIS
TY - JOUR
T1 - Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride
A1 - Allaoua, Malha Nazef
A2 - Bounoughaz, Moussa
A3 - Lamari, Rachid
JF - Revista de Chimie
JO - Rev. Chim.
PB - Revista de Chimie SRL
SN - 2668-8212
Y1 - 2017
VL - 68
IS - 2
SP - 232
EP - 237
UR - https://doi.org/10.37358/RC.17.2.5426
KW - Silicon
KW - cyclic voltammetry
KW - semiconductor
KW - Mott-Shottky
ER -


BibTex
@article{RevCh2017P232,
author = {Allaoua Malha Nazef and Bounoughaz Moussa and Lamari Rachid},
title = {Electrochemical Characterization of Surface Oxide Films Formed on Silicon Electrodes in 3% Sodium Chloride},
journal = {Revista de Chimie},
volume = {68},
number = {2},
pages = {232-237},
year = {2017},
issn = {2668-8212},
doi = {https://doi.org/10.37358/RC.17.2.5426},
url = {https://revistadechimie.ro/Articles.asp?ID=5426}
}
 
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